IndiumV3, Main, Repository, bibRecord, 009666

Progress in crystalline multijunction and thin-film photovoltaics

Identifieur interne : 009666 ( Main/Repository ); précédent : 009665; suivant : 009667

Progress in crystalline multijunction and thin-film photovoltaics

Auteurs : RBID : Pascal:06-0008197

Descripteurs français

Pascal (Inist)
- Article synthèse, Effet photovoltaïque, Effet physique rayonnement, Dégradation, Interface, Cellule solaire, Semiconducteur III-V, Gallium phosphure, Indium phosphure, Gallium arséniure, Germanium, Matériau amorphe, GaInP, Ga In P, GaAs, As Ga, 8460J, Ge, Si, Substrat Ge.
Wicri :
- concept : Matériau amorphe.

English descriptors

KwdEn :
- Amorphous material, Degradation, Gallium arsenides, Gallium phosphide, Germanium, III-V semiconductors, Indium phosphide, Interface, Photovoltaic effect, Physical radiation effects, Review, Solar cell.

Abstract

Photovoltaics are important in terrestrial applications such as remote power and renewable energy but are the primary source of electrical power for space systems. For space applications, priorities are high conversion efficiency and resistance to radiation-induced degradation. The emphasis is on III-V multijunction solar cells and comparatively lower efficiency but flexible, lightweight thin-film solar cells. Triple-junction III-V solar cells have reached conversion efficiencies of 30% at air mass zero (AM0). New lattice mismatch techniques and nitride materials hold promise for further efficiency increases. Thin-film solar cells generally have less than 15% efficiency but greater radiation resistance, lower cost, and lower mass.

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Pascal:06-0008197

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Progress in crystalline multijunction and thin-film photovoltaics</title>
<author><name sortKey="Senft, Donna Cowell" uniqKey="Senft D">Donna Cowell Senft</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</s1>
<s2>NM 87117-5776</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0008197</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 06-0008197 INIST</idno>
<idno type="RBID">Pascal:06-0008197</idno>
<idno type="wicri:Area/Main/Corpus">009A13</idno>
<idno type="wicri:Area/Main/Repository">009666</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
<term>Degradation</term>
<term>Gallium arsenides</term>
<term>Gallium phosphide</term>
<term>Germanium</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>Interface</term>
<term>Photovoltaic effect</term>
<term>Physical radiation effects</term>
<term>Review</term>
<term>Solar cell</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Article synthèse</term>
<term>Effet photovoltaïque</term>
<term>Effet physique rayonnement</term>
<term>Dégradation</term>
<term>Interface</term>
<term>Cellule solaire</term>
<term>Semiconducteur III-V</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Gallium arséniure</term>
<term>Germanium</term>
<term>Matériau amorphe</term>
<term>GaInP</term>
<term>Ga In P</term>
<term>GaAs</term>
<term>As Ga</term>
<term>8460J</term>
<term>Ge</term>
<term>Si</term>
<term>Substrat Ge</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">Photovoltaics are important in terrestrial applications such as remote power and renewable energy but are the primary source of electrical power for space systems. For space applications, priorities are high conversion efficiency and resistance to radiation-induced degradation. The emphasis is on III-V multijunction solar cells and comparatively lower efficiency but flexible, lightweight thin-film solar cells. Triple-junction III-V solar cells have reached conversion efficiencies of 30% at air mass zero (AM0). New lattice mismatch techniques and nitride materials hold promise for further efficiency increases. Thin-film solar cells generally have less than 15% efficiency but greater radiation resistance, lower cost, and lower mass.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Progress in crystalline multijunction and thin-film photovoltaics</s1>
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<fA11 i1="01" i2="1"><s1>SENFT (Donna Cowell)</s1>
</fA11>
<fA14 i1="01"><s1>Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</s1>
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<sZ>1 aut.</sZ>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
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<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Photovoltaics are important in terrestrial applications such as remote power and renewable energy but are the primary source of electrical power for space systems. For space applications, priorities are high conversion efficiency and resistance to radiation-induced degradation. The emphasis is on III-V multijunction solar cells and comparatively lower efficiency but flexible, lightweight thin-film solar cells. Triple-junction III-V solar cells have reached conversion efficiencies of 30% at air mass zero (AM0). New lattice mismatch techniques and nitride materials hold promise for further efficiency increases. Thin-film solar cells generally have less than 15% efficiency but greater radiation resistance, lower cost, and lower mass.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Article synthèse</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Review</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Artículo síntesis</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Effet photovoltaïque</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Photovoltaic effect</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Efecto fotovoltaico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Effet physique rayonnement</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Physical radiation effects</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Dégradation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Degradation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Degradación</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Interface</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Interface</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Interfase</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>16</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>16</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Gallium phosphure</s0>
<s5>17</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Gallium phosphide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s5>18</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>18</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Germanium</s0>
<s2>NC</s2>
<s5>20</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Germanium</s0>
<s2>NC</s2>
<s5>20</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Germanio</s0>
<s2>NC</s2>
<s5>20</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Matériau amorphe</s0>
<s5>21</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Amorphous material</s0>
<s5>21</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Material amorfo</s0>
<s5>21</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>GaInP</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Ga In P</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>8460J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Ge</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Substrat Ge</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
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<s5>48</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto inorgánico</s0>
<s5>48</s5>
</fC07>
<fN21><s1>002</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Challenges in Advanced Thin Films: Microstructures, Interfaces, and Reactions. Symposium</s1>
<s3>Charlotte, NC USA</s3>
<s4>2004-03-14</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Progress in crystalline multijunction and thin-film photovoltaics

Progress in crystalline multijunction and thin-film photovoltaics

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

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